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High Speed/High Power/High Voltage Silicon Carbide/Mosfet/IGBT Half Bridge Isolated Gate Driver
The Isolated Half Bridge Gate Driver is a high performance based on Texas Instrument's UCC21520A isolated dual-channel gate drivers with 4-A source and 6-Asink peak current. It is designed to drive Silicon Carbide (SiC), power MOSFETs and IGBTs, up to 1-MHz.
The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC.
The High Performance Half Bridge, Isolated gate driver is ideal for High Power EV BLDC Motor Control, High Frequency Induction Heater, Solar Power Inverter, UPS, DC-DC Power supply and Battery Charger.
Schematic and Layout
Dec 30,2022
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High Speed/High Power/High Voltage Silicon Carbide/Mosfet/IGBT Half Bridge Isolated Gate Driver
The Half Bridge Isolated Gate Driver is a high performance Gate driver for EV Motor, Inverter, Induction Heating and Power Supply projects.
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Published: Dec 30,2022
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- sam h Oct 24,2023
- Anton Moskovskiy Feb 06,2023
- Engineer Jan 14,2023
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